2N5682

Overview

The onsemi 2N5682 is a high-power NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-3 package. It features a maximum collector-emitter voltage of 80 V and supports a continuous collector current of 50 A. The device handles up to 300 W of power dissipation with a transition frequency of 2 MHz. Operating temperatures range from -65°C to +200°C, ensuring reliability in demanding environments.

Feature Summary

• High current handling capability suitable for heavy-duty switching applications
• Robust thermal performance allowing operation at elevated junction temperatures
• Standardized TO-3 metal can packaging for efficient heat dissipation

Applications

• Industrial motor control systems
• High-power audio amplification stages
• Power supply regulation circuits

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheets. Confirm package integrity as the TO-3 style requires specific mounting considerations. Ensure compliance with RoHS directives if required by your assembly process. Cross-reference part numbers carefully to avoid confusion with similar legacy devices.

Selection Notes

Select this component when high current capacity and robust thermal management are critical. The TO-3 package facilitates direct heatsinking for effective power dissipation. Consider the 80 V rating to ensure adequate voltage headroom for your specific circuit design requirements.

Part Context

This device belongs to the 2N568x series of high-power transistors manufactured by onsemi. These components are engineered for industrial and commercial applications requiring reliable high-current switching. The series utilizes silicon technology optimized for stable performance under varying thermal conditions.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation.