2N5770_D75Z

$0.04

Description：RF TRANS NPN 15V TO-92-3
Series：-

SKU:a950d57fddff Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 15V TO-92-3
Series：-
Mfr：onsemi
Package：Tape & Box (TB)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：15V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：6dB @ 60MHz
Gain：15dB
Power - Max：350mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 8mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5770_D75Z

Overview

The onsemi 2N5770_D75Z is an NPN RF transistor in a TO-92 package, designed for amplifiers, oscillators, and multipliers. It operates with collector currents between 1.0 mA and 30 mA. Key electrical parameters include a Collector-Emitter Voltage (VCEO) of 15 V, Collector-Base Voltage (VCBO) of 30 V, and continuous Collector Current (IC) of 50 mA. Total device dissipation is 350 mW at 25°C, derating by 2.8 mW/°C above that temperature. The junction-to-case thermal resistance is 125 °C/W, while junction-to-ambient is 357 °C/W. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

Engineered for radio frequency applications including amplification, oscillation, and frequency multiplication.
Features low collector-base capacitance to support high-frequency signal processing.
Provides defined small-signal current gain characteristics across specified operating frequencies.

Applications

RF amplifier circuits
Oscillator designs
Frequency multiplier stages

Procurement Notes

Verify the D75Z suffix indicates Tape and Reel packaging with the first wire-off as the collector and flat side facing up. Confirm the component status remains active or available through authorized channels before finalizing procurement plans.

Selection Notes

Select this component for low-power RF tasks requiring a 15 V collector-emitter rating and 50 mA continuous current capability. Ensure the design accommodates the 350 mW power dissipation limit and verify compatibility with the TO-92 radial lead configuration.

Part Context

This part belongs to the standard discrete NPN RF transistor family historically manufactured by Fairchild Semiconductor. The 2N5770 designation identifies a specific silicon planar epitaxial transistor optimized for small-signal radio frequency operations within the VHF/UHF spectrum ranges.

Replacement Considerations

Check datasheets for equivalent NPN RF transistors such as the MPS5179 or CP214 series. Verify matching breakdown voltages, current gains, and capacitance values to ensure functional interchangeability in existing RF circuit topologies.