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The Microchip Technology 2N5793U/TR is a dual NPN bipolar junction transistor array designed for surface mount applications. It features an LCC-6 package configuration with no lead design. The device supports a collector-emitter voltage of 40 V and a collector current of 600 mA. Power dissipation is rated at 600 mW. The component operates within a temperature range from -65°C to +175°C. It utilizes silicon technology and complies with RoHS standards.
Verify the specific ordering suffix TR against official Microchip documentation to confirm tape and reel packaging requirements. Ensure the LCC-6 footprint matches the target PCB layout. Confirm that the 40V rating and 600mA current limits align with the intended circuit load conditions before finalizing procurement.
Select this component when a dual NPN BJT array is required for space-constrained surface mount designs. Consider the 600mW power dissipation limit and the 40V voltage rating as primary constraints. Evaluate the LCC-6 package compatibility with automated assembly processes. Verify that the operating temperature range meets the environmental specifications of the end application.
This part belongs to the 2N5793 series of dual small-signal BJTs manufactured by Microchip Technology. It serves as a surface-mount alternative to through-hole equivalents, offering integrated dual transistors in a single package. The series is characterized by silicon construction and standardized electrical parameters for general-purpose switching tasks.
Consult official Microchip substitution guides for verified equivalent part numbers. Cross-reference pinout configurations and electrical ratings to ensure functional compatibility. Generic replacements may not match the specific LCC-6 package dimensions or thermal characteristics.