2N5794A

Overview

The 2N5794A is a dual NPN silicon small-signal bipolar junction transistor (BJT) qualified to MIL-PRF-19500/495 standards. It features a collector-emitter voltage of 40V, a collector-base voltage of 75V, and an emitter-base voltage of 6.0V. The device supports a maximum collector current of 600mA with a total power dissipation of 600mW in the TO-78 package. It operates within a temperature range of -65°C to +200°C and provides a minimum DC current gain (hFE) of 35.

Feature Summary

• Dual NPN configuration housed in a hermetic TO-78 metal can package for reliable surface mounting or through-hole integration.
• Qualified per MIL-PRF-19500/495 specifications ensuring high reliability for demanding operational environments.
• Capable of handling up to 600mA collector current with a maximum operating junction temperature of 200°C.

Applications

• Military and aerospace electronic systems requiring radiation-hardened or high-reliability components
• High-temperature industrial control circuits
• Small-signal amplification stages in ruggedized communication equipment

Procurement Notes

Verify that the specific order includes the 'A' suffix to ensure compliance with the 2N5794A specification rather than the standard 2N5794 variant. Confirm that the component meets the MIL-PRF-19500/495 qualification level required for your application. Ensure proper handling procedures are followed due to the sensitive nature of the semiconductor materials and the hermetic seal integrity of the TO-78 package during installation.

Selection Notes

Select this component when a dual NPN transistor with high thermal stability and military-grade reliability is required. The 40V rating suits low-voltage signal processing applications. Consider the TO-78 package dimensions for PCB layout constraints. Verify that the 600mA current capacity aligns with the load requirements of the target circuit design without exceeding the 600mW power dissipation limit.

Part Context

This part belongs to the Microchip Technology (formerly Microsemi) family of discrete semiconductors designed for harsh environments. It serves as a specialized alternative to commercial-grade transistors where longevity and performance under extreme conditions are critical. The dual configuration allows for compact circuit designs in differential amplifier or switching applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires matching the MIL-PRF-19500/495 qualification and TO-78-6 package form factor. Consult official manufacturer channels for validated cross-reference data.