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Product Detailed Parameters
- Description：TRANS 2PNP 60V 600MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：500mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5796 is a dual small-signal bipolar junction transistor (BJT) constructed using silicon technology. It features a PNP configuration designed for surface mount applications in the TO-126 package. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. It handles a power dissipation of 5 W and operates within a temperature range of -65°C to +175°C. The component exhibits a DC current gain (hFE) of up to 300 at 150 mA and 10 V, with a collector-emitter saturation voltage of 1.6 V.
Feature Summary
- Dual PNP transistor configuration integrated into a single silicon component
- High thermal stability supporting operation up to 175°C junction temperature
- Surface mount design optimized for automated assembly processes
Applications
- General-purpose switching circuits requiring dual PNP logic
- Signal amplification stages in industrial control systems
- Power management interfaces operating within specified voltage limits
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm exact packaging and qualification levels. Ensure that the procurement channel provides valid traceability records for the component batch. Confirm RoHS compliance status directly from the manufacturer datasheet prior to integration into regulated assemblies.
Selection Notes
Select this component when a dual PNP topology is required for space-constrained surface mount designs. Evaluate the 60 V voltage ratings against circuit peak requirements to ensure adequate headroom. Consider the 5 W power dissipation capability and thermal resistance characteristics for appropriate heat sinking or PCB layout strategies.
Part Context
The 2N5796 belongs to the standard small-signal BJT family manufactured by Microchip Technology. It serves as a discrete semiconductor solution for analog and digital switching applications. The part utilizes mature silicon processing techniques to deliver reliable performance across wide industrial temperature ranges.
Replacement Considerations
Consult official Microchip cross-reference documents for verified equivalent part numbers. Do not substitute based on generic pinout compatibility without verifying electrical parameter alignment.
