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The Microchip Technology 2N5796A is a dual small-signal PNP bipolar junction transistor (BJT) array housed in a TO-78-6 hermetic metal package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current of 600 mA per element. The device supports a power dissipation of 500 mW to 600 mW depending on the specific variant configuration, with a DC current gain (hFE) up to 300 at 150 mA and 10 V. Operating temperatures range from -65°C to +175°C.
Verify that the ordering suffix matches the required performance grade and packaging style. Confirm RoHS compliance status as standard military variants may differ from commercial specifications. Ensure the supplier provides traceable documentation for the TO-78-6 package integrity. Cross-reference the specific datasheet revision to confirm electrical parameters align with design requirements before finalizing procurement orders.
Select this component when hermetic sealing and high-temperature operation are critical. The dual PNP structure reduces board space compared to discrete transistors. Verify that the 60V breakdown voltage meets the circuit's peak transient requirements. Consider the TO-78-6 footprint constraints during PCB layout planning to ensure proper thermal management and mechanical fit.
This part belongs to the 2N5796 family of dual small-signal PNP transistors manufactured by Microchip Technology. It serves as a high-reliability alternative to commercial plastic-packaged equivalents, offering superior environmental resistance. The family includes variations such as the 2N5796U/TR, differing primarily in packaging and specific electrical tolerances defined by the manufacturer's quality standards.
Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires matching the TO-78-6 package dimensions and verifying equivalent electrical characteristics including VCEO, IC max, and hFE ranges. Consult Microchip Technology for authorized cross-reference recommendations.