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The Microchip Technology 2N5796AU/TR is a dual small-signal bipolar junction transistor (BJT) configured as two PNP transistors in a single surface-mount package. It utilizes silicon technology and is designed for high-temperature operation with a maximum junction temperature of +175°C. The device features a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Maximum power dissipation is rated at 5 W. The component supports a minimum operating temperature of -65°C and offers a maximum DC current gain (hFE) of 300 at 150 mA and 10 V.
Verify the specific suffix against official Microchip documentation to confirm package type and environmental compliance. Ensure that the procurement channel provides traceability data required for qualified components. Confirm availability through authorized distributors as lead times may vary significantly for specialized semiconductor products.
Select this component when a dual PNP BJT is required for surface-mount assembly in environments exceeding standard industrial temperature ranges. Compare the 5 W power dissipation and 60 V voltage ratings against circuit requirements. Consider the TO-243AA package constraints regarding thermal management and board space compared to alternative discrete or dual transistor solutions.
This part belongs to the 2N5796 family of dual small-signal BJTs manufactured by Microchip Technology. It serves as a surface-mount variant of traditional through-hole dual transistors, offering equivalent electrical characteristics in a modern packaging format. The series is commonly utilized in applications requiring matched pairs or independent dual control within a constrained physical area.
Direct replacements include JANS2N5796U/TR and JAN2N5796U/TR from the same manufacturer. Verify pinout compatibility and thermal resistance specifications before substituting with other dual PNP SMD transistors.