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The Microchip Technology 2N5796U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured using silicon technology. It features a PNP configuration designed for surface-mount installation in an LCC-3 package. The device supports a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 5 V. It handles a power dissipation (Pd) of 5 W and operates within a temperature range of -65°C to +175°C. The component exhibits a maximum DC current gain (hFE) of 300 at 150 mA and 10 V, with a collector-emitter saturation voltage of 1.6 V.
Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation prior to procurement. Ensure that the received components match the exact JANS or standard commercial grade specifications required by the design. Confirm RoHS compliance status and environmental certifications directly from the supplier's certificate of conformity to meet regulatory standards.
Select this component when a dual PNP configuration is required in a compact surface-mount footprint. Consider the 5 W power dissipation capability and extended temperature range for demanding applications. Verify that the 60 V voltage ratings align with the circuit's maximum operating conditions to ensure adequate safety margins during selection.
This part belongs to Microchip's discrete semiconductor portfolio, specifically within the bipolar transistor category. It serves as a specialized component for designs requiring multiple PNP transistors in a single package. The product line emphasizes reliability for industrial and commercial electronics, offering a robust solution for signal conditioning and switching tasks.
Consult official Microchip substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully before replacing. Do not assume compatibility with generic dual PNP transistors without verifying package dimensions and thermal characteristics.