2N5818 PBFREE

$0.29

Description：40V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:9b9d234cfc90 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：40V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：750mA
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 100mA, 1V
Power - Max：625 mW
Frequency - Transition：135MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5818 PBFREE

Overview

The 2N5818 PBFREE is an NPN general-purpose small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It is designed for through-hole mounting in a TO-92-3 package. The device features a maximum collector-emitter voltage of 40V and a continuous collector current rating of 750mA. Thermal performance is defined by a maximum power dissipation of 625mW at 25°C ambient temperature. The component supports a transition frequency of 135MHz, suitable for standard switching and amplification applications.

Feature Summary

NPN polarity configuration for general-purpose signal processing
Through-hole compatible TO-92-3 leaded package
Lead-free construction compliant with RoHS standards

Applications

General purpose low-power switching circuits
Small-signal amplification stages
Audio frequency pre-amplifier designs

Procurement Notes

Verify the specific manufacturer designation when sourcing, as multiple vendors produce this part number. Confirm that the procurement includes the PBFREE suffix to ensure compliance with lead-free manufacturing requirements. Cross-reference datasheets from authorized distributors to validate electrical parameters against the original Microchip or Central Semiconductor specifications before integration into production.

Selection Notes

Select this component for applications requiring moderate current handling within a compact through-hole form factor. The 40V breakdown voltage limits suitability for high-voltage environments. Evaluate thermal management requirements based on the 625mW dissipation limit. Ensure circuit design accounts for the 135MHz frequency response to maintain signal integrity in higher-speed switching scenarios.

Part Context

This transistor belongs to the broader category of NPN silicon small-signal devices used in consumer electronics and industrial control systems. It serves as a fundamental active element for biasing and signal conditioning. The TO-92-3 package provides mechanical stability for manual assembly processes while maintaining cost efficiency for high-volume manufacturing runs.