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Product Detailed Parameters
- Description：TRANS NPN 100V 0.2A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：200 mA
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5830 is an NPN general-purpose amplifier transistor designed for high-voltage applications and gas discharge display driving. It features a collector-emitter voltage of 100 V, a continuous collector current of 200 mA, and a total device dissipation of 625 mW at 25°C. The component operates within a junction temperature range of -55 to +150 °C and utilizes a TO-92 package.
Feature Summary
- Designed for general purpose high voltage amplifiers
- Suitable for gas discharge display driving
- Utilizes Process 16 technology
Applications
- General purpose high voltage amplifiers
- Gas discharge display driving
Procurement Notes
Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the specific ordering suffix matches the required packaging format (e.g., bulk or tape and reel). Ensure the revision level aligns with design requirements, noting that specifications may change without notice.
Selection Notes
Select this component for circuits requiring moderate voltage handling up to 100 V and low-current amplification. Consider the thermal resistance values when designing heat dissipation strategies. Compare against similar NPN transistors like the 2N5551 if alternative sourcing or slightly different gain characteristics are needed.
Part Context
This discrete NPN bipolar junction transistor belongs to the general-purpose amplifier category. It is commonly used in switching and linear amplification roles where a compact TO-92 footprint is preferred. The device is part of a broader family of small-signal transistors utilized in consumer electronics and industrial control systems.
Replacement Considerations
The datasheet references the 2N5551 for characteristic comparison. Verify pinout compatibility and electrical limits before substituting with other NPN transistors in the same voltage and current class.
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 100 V.
What is the recommended operating junction temperature range?
The operating and storage junction temperature range is -55 to +150 °C.
How does the DC current gain vary with collector current?
The DC current gain (hFE) ranges from 60 to 500 at IC = 1.0 mA, and from 80 to 500 at IC = 10 mA and 50 mA.
