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Product Detailed Parameters
- Description：NPN TRANSISTOR
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The Microchip Technology 2N5839 is a silicon NPN power bipolar junction transistor housed in a TO-3 metal package. It features a collector-emitter voltage rating of 275 V and a collector-base voltage of 300 V, with an emitter-base voltage limit of 6 V. The device supports a continuous collector current of 3 A and provides a total device dissipation capacity of 100 W. Designed for through-hole or surface-mount mounting, this component serves as a robust discrete semiconductor solution for high-voltage switching and amplification applications.
Feature Summary
- High-voltage capability with 275 V collector-emitter breakdown
- Robust power handling with 100 W total device dissipation
- Durable metal TO-3 package construction
Applications
- High-voltage switching circuits
- Power amplification stages
- Industrial control systems
Procurement Notes
Verify the manufacturer origin and datasheet version when sourcing components. Ensure the specific lot markings align with Microchip Technology specifications to confirm authenticity. Cross-reference the ordering suffixes if available to match exact electrical tolerances. Confirm that the physical package dimensions correspond to standard TO-3 footprints required by the target design.
Selection Notes
Select this component for designs requiring high voltage isolation and significant power dissipation capabilities. The TO-3 package offers superior thermal performance compared to plastic alternatives. Evaluate the thermal resistance requirements of the application to ensure adequate heat sinking. Consider the 3 A current limit when sizing the load circuitry to prevent overstress conditions during operation.
Part Context
The 2N5839 belongs to the family of silicon NPN power transistors manufactured by Microchip Technology. It is categorized as a single bipolar junction transistor (BJT) within the discrete semiconductors portfolio. This part number represents a legacy specification often utilized in established industrial and consumer electronics designs requiring reliable high-power switching performance.
Replacement Considerations
Consult official Microchip Technology documentation for verified substitute part numbers. Do not assume cross-compatibility with generic equivalents without verifying pinout and electrical parameter alignment.
