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Product Detailed Parameters
- Description：TRANS NPN 60V 25A TO-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：25 A
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：4V @ 6.25A, 25A
- Current - Collector Cutoff (Max)：2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 10A, 4V
- Power - Max：200 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5885 PBFREE is an NPN silicon epitaxial base power transistor housed in a TO-3 metal case. Designed for power amplifier and switching applications, it features a collector-base voltage of 60 V, continuous collector current of 25 A, and peak collector current of 50 A. The device supports a maximum power dissipation of 200 W at 25°C with a thermal resistance of 0.875 °C/W. It operates within a junction temperature range of -65 to +200°C.
Feature Summary
- Complementary silicon epitaxial base construction optimized for high-power handling
- Robust mechanical design utilizing a metal TO-3 package for efficient heat dissipation
- Capable of sustaining high continuous and peak collector currents for demanding loads
Applications
- Power amplifier circuits
- High-current switching applications
Procurement Notes
Verify the specific ordering suffix required for plating configuration before purchase. The manufacturer offers distinct options for tin/lead or lead-free terminal finishes. Confirm that the requested variant matches the exact electrical and mechanical specifications needed for the target application to ensure compatibility.
Selection Notes
Evaluate the thermal management requirements carefully, as the device dissipates up to 200 W. Ensure the mounting surface and heatsink can maintain the junction temperature within the specified operating limits. Verify that the drive circuitry can supply the necessary base current to achieve saturation at the intended load levels.
Part Context
This component belongs to a complementary series of silicon power transistors manufactured by Central Semiconductor Corp. The 2N5885 serves as the NPN counterpart to the 2N5883 PNP type. Both devices share similar structural characteristics and are intended for use in matched pairs within push-pull configurations for audio and RF power stages.
Replacement Considerations
The manufacturer has classified this product as End of Life (EOL) per public notice PDN01250. No direct replacement part numbers are currently suggested by the manufacturer for this specific model.
