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Product Detailed Parameters
- Description：JFET N-CH 30V TO92-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 15V
- Resistance - RDS(On)：375 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5953 is a silicon N-channel Junction Field Effect Transistor (JFET) designed for switching, RF amplifier, and mixer applications requiring low capacitance. It operates within a junction temperature range of -65°C to +150°C with a maximum power dissipation of 360 mW at 25°C ambient. Key electrical characteristics include a drain-source saturation current (IDSS) ranging from 2.5 mA to 5.0 mA, a gate-source cutoff voltage (VGS(OFF)) between 0.8 V and 3.0 V, and a forward admittance (yfs) spanning 2.0 mS to 6.5 mS. The device features a maximum gate-source voltage of 30 V and exhibits input capacitance (Ciss) up to 6.0 pF.
Feature Summary
- Engineered for low capacitance requirements in RF amplifier and mixer circuits
- Suitable for high-speed switching applications due to fast transition characteristics
- Utilizes TO-92-18R case package for standard through-hole mounting
Applications
- RF amplifier stages
- Mixer circuits
- Low-capacitance switching applications
Procurement Notes
This component has been officially classified as End of Life by the manufacturer. Current availability is restricted to existing stock only, with no further production planned. Buyers should verify remaining inventory levels directly with authorized distributors or the manufacturer's support team before finalizing procurement decisions.
Selection Notes
Designers should evaluate the specific IDSS and VGS(OFF) ranges required for their circuit topology against the device's specified limits. Consider the thermal constraints imposed by the 360 mW power dissipation rating and ensure the operating environment remains within the -65°C to +150°C junction temperature specification for reliable performance.
Part Context
The 2N5953 belongs to the Central Semiconductor 2N5949 series of silicon N-channel JFETs. This family includes variants such as the 2N5949, 2N5951, and 2N5952, which share similar physical packaging and general application profiles but differ in specific electrical parameters like pinch-off voltage and saturation current.
Replacement Considerations
No direct replacement part numbers are currently available from Central Semiconductor for this discontinued model. Customers are advised to contact [email protected] for assistance in locating alternate sources or suitable substitutes from other manufacturers.
FAQ
What is the maximum power dissipation for the 2N5953?
The maximum power dissipation is 360 mW at an ambient temperature of 25°C.
What is the typical input capacitance of this JFET?
The input capacitance (Ciss) is specified as a maximum of 6.0 pF at 1.0 MHz.
Is the 2N5953 still in active production?
No, the 2N5953 has been transitioned to End of Life status and is available only while stock lasts.
