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The Central Semiconductor Corp 2N5961 TIN/LEAD is an epoxy-molded silicon NPN transistor manufactured via the epitaxial planar process. It operates as a small-signal bipolar device with a collector-emitter breakdown voltage of 60 V and a continuous collector current rating of 50 mA. The component features a transition frequency of 100 MHz and a maximum power dissipation of 625 mW. Packaged in a TO-92-3 through-hole configuration, this specific variant includes a tin/lead plating suffix for ordering compatibility.
When requesting devices with tin/lead plated terminations, the suffix "TIN/LEAD" must be explicitly added to the part number during the ordering process. This designation ensures the correct material composition is supplied. Verify that the requested variant matches the required lead finish specifications for your assembly process before finalizing the purchase order.
Select this component when a 60 V NPN transistor with 50 mA current capability is required. The TO-92-3 package suits through-hole designs. Ensure the tin/lead finish aligns with regulatory or manufacturing requirements. Compare electrical parameters against circuit demands to confirm suitability for the intended operating conditions.
The 2N5961 belongs to a series of silicon NPN transistors produced by Central Semiconductor Corp. These devices are engineered for reliability in standard electronic assemblies. The series utilizes robust packaging suitable for various mounting methods. Understanding the specific series characteristics aids in integrating the component into broader system architectures effectively.
Public confirmed substitute part numbers include 2N5962 and 2N5963. These variants share the same NPN silicon construction and epitaxial planar process but may differ in specific electrical ratings such as voltage or current limits. Verify datasheet specifications before substitution.