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The 2N6027G is a programmable unijunction transistor (UJT) manufactured by onsemi. It features a 40 V rating, 300 mW power dissipation, and operates within a -50 °C to +100 °C temperature range. The device utilizes a TO-92 (TO-226AA) three-pin through-hole package with dimensions of 5.2 x 4.19 x 5.33 mm. Key electrical characteristics include a peak output voltage of 11 V typical, low gate-to-anode leakage current of 10 nA maximum, and an on-state voltage of 1.5 V maximum at 50 mA forward current.
Verify the component marking matches the official ON Semiconductor logo and part number. Confirm the package style corresponds to TO-92 or TO-226AA as specified in the datasheet. Ensure the supplier provides documentation confirming the device meets the original semiconductor manufacturer's specifications for programmable unijunction transistors.
Select this component when circuit design requires adjustable timing or pulse characteristics through programmable resistance parameters. The integrated anode gate offers flexibility for specific thyristor control schemes not available in standard UJTs. Consider the TO-92 package constraints for thermal management and automatic insertion compatibility during high-volume manufacturing.
The 2N6027G belongs to the programmable unijunction transistor family designed to allow engineers to customize device behavior by selecting two external resistor values. This programmability distinguishes it from fixed-parameter devices, enabling tailored performance for oscillator and timing applications without requiring complex external networks.
The 2N6028 is a documented alternative within the same series offering similar programmable characteristics. Cross-reference specific electrical limits such as peak voltage and leakage currents against the target application requirements before substitution.