SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2N6027RL1G is a programmable unijunction transistor (PUT) manufactured by onsemi. It operates within an anode-to-cathage voltage range of up to 40 V and dissipates 300 mW at 25°C. The device features a typical peak output voltage of 11 V and a maximum forward voltage of 1.5 V at 50 mA. Electrical characteristics include a valley current of 18 µA and a gate-to-anode leakage current of 10 nA maximum. It utilizes a TO-92 (TO-226AA) package with Pin 1 as Anode, Pin 2 as Gate, and Pin 3 as Cathode.
Verify the specific ordering suffix against official documentation to confirm packaging orientation and quantity. Confirm that the component matches the required JEDEC registered data specifications. Ensure compatibility with automatic insertion equipment if high-volume manufacturing is planned. Validate thermal derating requirements for ambient temperatures exceeding 25°C.
Select this component when precise programming of unijunction characteristics such as RBB and η is required. Consider its low offset voltage for applications demanding accurate turn-on thresholds. Evaluate the TO-92 package suitability for cost-sensitive, high-volume designs requiring automatic insertion compatibility.
This device belongs to the 2N6027/2N6028 family of programmable unijunction transistors. It serves as a preferred device choice for engineers needing customizable triggering behavior without complex discrete networks. The design enables parameter adjustment through simple external resistor configurations.
The 2N6027 is the base equivalent part number. Verify pinout compatibility and electrical limits before substitution.
Characteristics such as RBB, η, IV, and IP are programmed by selecting two external resistor values.
The maximum power dissipation is 300 mW at an ambient temperature of 25°C.
The typical peak output voltage is 11 V.