2N6027 TRB TIN/LEAD

Overview

The Central Semiconductor Corp 2N6027 TRB TIN/LEAD is a programmable unijunction transistor (PUT) manufactured in silicon. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -55°C to +100°C. The device features a maximum power dissipation of 300 mW, an anode voltage rating of 40 V, and a gate-kathode voltage rating of 5.0 V.

Feature Summary

• Programmable unijunction configuration for precise timing control
• Silicon construction ensuring stable thermal performance
• Through-hole mounting capability for robust mechanical integration

Applications

• Precision timing circuits
• Voltage-controlled oscillators
• Triggering networks for thyristors

Procurement Notes

Verify the specific suffix 'TRB' against official datasheets to confirm tape-and-reel packaging status. Confirm leaded tin composition requirements with the manufacturer. Request current production lifecycle status directly from Central Semiconductor Corp before finalizing procurement plans.

Selection Notes

Select this component when a programmable unijunction transistor is required for high-stability timing applications. Ensure the 40 V anode voltage and 300 mW power dissipation ratings align with circuit demands. Verify that the TO-92-3 through-hole form factor fits the designated PCB layout constraints.

Part Context

This part belongs to the 2N6027 series of programmable unijunction transistors produced by Central Semiconductor Corp. These devices serve as versatile alternatives to traditional UJTs, offering adjustable peak point voltages through external resistor networks for customized circuit behavior.

Replacement Considerations

Consult official cross-reference lists for parameter-equivalent PUTs. Verify pinout compatibility and electrical limits before substituting.