2N6036

Overview

The STMicroelectronics 2N6036 is a PNP silicon power Darlington transistor designed for high-current switching and amplification. It features an integrated antiparallel collector-emitter diode and operates within the SOT-32 (TO-126) plastic package. Key electrical ratings include a maximum collector-base voltage of 80 V, a continuous collector current of 4 A, and a peak collector current of 8 A. The device supports a total dissipation of 40 W at a case temperature of 25°C, with a maximum operating junction temperature of 150°C.

Feature Summary

• Complementary PNP-NPN configuration
• Integrated antiparallel collector-emitter diode
• High DC current gain capability

Applications

• General purpose switching
• General purpose amplifier

Procurement Notes

Verify the specific manufacturer source when sourcing this component, as multiple vendors produce equivalent parts under the same JEDEC designation. Confirm that the received unit matches the STMicroelectronics datasheet specifications regarding pinout orientation and thermal resistance values to ensure compatibility with existing circuit designs.

Selection Notes

Select this component for applications requiring robust PNP power switching with high current handling capabilities. Ensure the design accounts for the 40 W power dissipation limit and utilizes appropriate heat sinking to maintain the junction temperature below 150°C during operation.

Part Context

This part belongs to the complementary pair alongside the 2N6039 NPN transistor. Both devices share identical mechanical dimensions and mounting requirements in the SOT-32 package, facilitating balanced design implementation in push-pull or complementary circuits.

Replacement Considerations

Equivalent parts from other manufacturers must match the 80 V rating, 4 A current capacity, and SOT-32 package form factor to ensure direct interchangeability without PCB modifications.