2N6038

Overview

The onsemi 2N6038G is a plastic NPN Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features a maximum collector-emitter voltage of 60 Vdc, a continuous collector current of 4.0 Adc, and a peak collector current of 8.0 Apk. The device provides a total device dissipation of 40 W at a case temperature of 25°C, with a thermal resistance from junction to case of 3.12 °C/W. Operating and storage junction temperatures range from -65°C to +150°C.

Feature Summary

• High DC current gain ranging from 500 to 15,000 under specified test conditions
• Robust electrostatic discharge protection exceeding 400 V via the machine model rating
• Epoxy encapsulation meets UL 94 V-0 flammability standards

Applications

• General-purpose amplification circuits
• Low-speed switching applications
• Power transistor stages requiring high current handling

Procurement Notes

Verify the specific part number suffix when ordering, as the 'G' designation indicates a lead-free package compliant with RoHS standards. Confirm that the TO-225 package style matches your board layout requirements. Ensure thermal management solutions are adequate to maintain the junction temperature within the specified operating range during operation.

Selection Notes

Select this component for designs requiring high current gain and robust power handling in a single package. Consider the 60 V collector-emitter voltage limit and the 4 A continuous current capability against your circuit demands. Evaluate the thermal resistance characteristics to determine if an appropriate heatsink is necessary for your specific ambient temperature and duty cycle conditions.

Part Context

This device belongs to the 2N603x series of plastic Darlington complementary silicon power transistors manufactured by onsemi. The series includes both PNP (2N6034G, 2N6035G, 2N6036G) and NPN (2N6038G, 2N6039G) variants, offering complementary configurations for push-pull or bridge driver topologies. These transistors share similar physical packaging and thermal characteristics while differing in polarity and breakdown voltage ratings.

Replacement Considerations

Direct substitutes include other 2N6038 equivalents from different manufacturers that match the TO-225 package and electrical specifications. Verify pinout compatibility, specifically ensuring Pin 1 is Emitter, Pin 3 is Base, and Pins 2/4 are Collector. Cross-reference datasheets for saturation voltages and current gains to ensure functional parity in existing designs.