2N6045 PBFREE

Overview

The 2N6045 PBFREE is a NPN Darlington bipolar junction transistor manufactured by Central Semiconductor Corp. It features an 8 A maximum collector current and a 100 V collector-emitter breakdown voltage. The device is housed in a TO-220AB through-hole package with a maximum power dissipation of 2.2 W. It exhibits a minimum DC current gain of 1000 and a transition frequency of 4 MHz. The component operates within a junction temperature range of -65°C to 150°C.

Feature Summary

• High current amplification capability provided by the Darlington configuration
• Robust thermal performance suitable for high-power switching applications
• Through-hole mounting design for secure mechanical attachment

Applications

• High-current switching circuits
• Power amplifier stages
• Motor control interfaces

Procurement Notes

Verify the specific manufacturing lot and RoHS compliance status against the latest datasheet, as component availability may vary. Confirm that the TO-220AB package dimensions match the target PCB footprint requirements before finalizing procurement decisions for this discrete semiconductor part.

Selection Notes

Select this component when high current gain and moderate voltage handling are required in a through-hole format. Ensure the application circuit can accommodate the 2.2 W power dissipation limit and provides adequate heat sinking. Verify compatibility with the 100 V collector-emitter voltage rating for the intended load conditions.

Part Context

This part belongs to the NPN Darlington transistor category from Central Semiconductor Corp. It is designed for general-purpose power switching and amplification tasks. The TO-220AB package facilitates efficient thermal management compared to smaller surface-mount alternatives, making it suitable for board-level power applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.