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Product Detailed Parameters
- Description：12A 80V TH TRANSISTOR-BIPOLAR PO
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：12:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 24mA, 6A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 6A, 3V
- Power - Max：150 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
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Overview
The 2N6051 PBFREE is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage rating of 80V and a continuous collector current capacity of 3A. The device is housed in a TO-220AB package designed for through-hole mounting, with a maximum power dissipation of 40W at an ambient temperature of 25°C. It exhibits a DC current gain (hFE) ranging from 25 to 150 when tested at a collector current of 1A and a collector-emitter voltage of 4V. The component operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- High-power handling capability suitable for demanding switching applications
- Robust thermal performance via metal tab construction
- Wide operating temperature range for industrial environments
Applications
- General-purpose power switching circuits
- Audio amplifier output stages
- Voltage regulator pass elements
Procurement Notes
Verify the specific datasheet revision and electrical parameter limits directly with Central Semiconductor Corp before finalizing designs. Confirm that the TO-220AB package dimensions match the intended PCB footprint and thermal management strategy. Ensure compliance with RoHS directives if required by the end product specifications.
Selection Notes
Select this component for applications requiring moderate power dissipation and high current handling in a standard through-hole configuration. Compare the hFE spread against circuit requirements to ensure consistent performance across production batches. Evaluate thermal resistance values to determine appropriate heatsinking solutions for sustained operation.
Part Context
This part belongs to the general-purpose NPN transistor family produced by Central Semiconductor Corp. It serves as a discrete semiconductor solution for power control tasks. The manufacturer utilizes silicon technology to achieve reliable performance in various electronic assemblies.
Replacement Considerations
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical ratings such as VCEO, IC, and PD before implementing any alternative components.
