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Product Detailed Parameters
- Description：25V 100MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：200MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N6076 TRE TIN/LEAD is a PNP low-noise bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92 cylindrical package designed for through-hole mounting. The device supports a maximum collector current of 0.1 A and operates with a collector-emitter voltage of 25 V. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a maximum power dissipation capability within the standard TO-92 form factor. The component is rated for junction temperatures up to 150 °C and features an e0 terminal finish, indicating tin plating.
Feature Summary
- Optimized for low-noise signal amplification applications
- Single configuration PNP bipolar junction transistor structure
- Robust thermal performance supporting high junction temperatures
Applications
- Low-noise audio pre-amplifier stages
- Sensitive sensor interface circuits
- High-fidelity analog signal processing
Procurement Notes
Verify the specific ordering suffix required for lead-free versus tin/lead plating configurations directly with the manufacturer or authorized distributors. Confirm RoHS compliance status as the base part may not be compliant depending on the finish selected. Ensure the TO-92 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when low noise figure is critical for PNP transistor applications requiring moderate current handling. The TO-92 package offers a compact solution for through-hole designs. Compare hFE minimums against circuit requirements to ensure sufficient gain. Consider thermal management constraints given the 150 °C maximum junction temperature rating for reliable long-term operation.
Part Context
This part belongs to Central Semiconductor's discrete bipolar transistor lineup, specifically targeting the PNP category. The 2N6076 designation identifies it as a legacy-style number often used in audio and precision analog circuits. The manufacturer provides both standard and specialized packaging options for this silicon-based device.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative PNP low-noise transistors such as the BC560 series or equivalent devices from other manufacturers based on pinout and electrical parameter matching.
