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Product Detailed Parameters
- Description：MOSFET N-CH 600V 2A DPAK
- Series：*
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 155°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The UMW 2N60L is a high-voltage N-channel MOSFET designed for robust performance in demanding power applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 2A. The device exhibits an on-state resistance of 5Ω at VGS = 10V, ensuring efficient conduction. Key electrical characteristics include ultra-low gate charge and low reverse transfer capacitance, which facilitate fast switching capabilities. The component is engineered with high rugged avalanche characteristics and improved dv/dt capability, making it suitable for high-speed switching environments.
Feature Summary
- High voltage rating with 600V breakdown capability
- Fast switching capability supported by low gate charge
- High ruggedness with specified avalanche energy limits
- Improved dv/dt capability for stable operation
Applications
- High speed switching applications in power supplies
- PWM motor controls
- High efficient DC to DC converters
- Bridge circuits
Procurement Notes
Verify the manufacturer designation carefully, as the model number 2N60L is historically associated with Unisonic Technologies (UTC). Confirm that the specific batch or datasheet explicitly identifies UMW as the producer. Ensure the package type matches the required form factor, as this series is available in multiple packages including TO-220, TO-220F, TO-251, and TO-252. Cross-reference the pinout assignments to guarantee compatibility with existing PCB layouts.
Selection Notes
Select this component when a 600V N-channel MOSFET with moderate current handling is required. The 5Ω RDS(on) at 10V gate drive indicates suitability for lower current switching tasks rather than high-power conduction. Consider the thermal management requirements based on the chosen package style. Verify that the gate charge specifications align with the driving circuit's ability to switch efficiently at the desired frequency.
Part Context
This part belongs to a family of high-voltage power MOSFETs designed for general-purpose switching. Similar devices in this category often feature comparable voltage ratings but vary significantly in on-resistance and current capacity. The 2N60L represents a specific configuration optimized for reliability and switching speed rather than maximum current throughput. It is commonly found in consumer electronics and industrial control systems requiring isolated high-side or low-side switching.
Replacement Considerations
Direct substitutes may include other 600V N-channel MOSFETs with similar 2A current ratings. Check for compatible packages such as TO-220 or TO-252. Ensure the replacement has equal or better avalanche energy ratings and comparable gate charge values to maintain switching performance.
