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The onsemi 2N6107G is a PNP silicon power bipolar junction transistor designed for high-current switching applications. It features a maximum collector-emitter voltage of 70V and a continuous collector current rating of 7A. The device supports a total power dissipation of 40W and operates within a junction temperature range of -65°C to 150°C. Packaged in a TO-220AB through-hole case, it offers a transition frequency of 10MHz and a minimum DC current gain (hFE) of 2.3.
Verify the specific manufacturer source when ordering, as multiple vendors produce this standard part number. Confirm that the package matches the TO-220AB flange-mount specification required for your thermal management design. Ensure the component meets the necessary electrical ratings for your specific load conditions before finalizing procurement.
Select this component for applications requiring robust PNP switching with moderate voltage tolerance. Consider the TO-220AB package for efficient heat sinking solutions. Evaluate the 70V breakdown voltage against peak transient loads to ensure adequate safety margins in your circuit design.
This transistor belongs to the family of complementary silicon plastic power transistors. It serves as the PNP counterpart to NPN variants within the same series, enabling push-pull configurations. The standardized 2N designation ensures compatibility across various industrial and commercial electronic systems requiring reliable bipolar switching.
Direct substitutes include other manufacturers' versions of the 2N6107 such as those from Central Semiconductor or STMicroelectronics. Verify pinout compatibility and thermal resistance characteristics when cross-referencing alternative sources to maintain circuit integrity.