2N6111G

Overview

The onsemi 2N6111G is a PNP silicon plastic power transistor designed for high-current applications. It features a continuous collector current of -7 A and a maximum collector-emitter voltage of -30 V. The device operates within a junction temperature range of -65°C to +150°C and dissipates up to 40 W of power. Key electrical specifications include a minimum DC collector/base gain (hFE) of 30 and a transition frequency (fT) of 10 MHz. Packaged in a TO-220-3 through-hole case, it offers a thermal resistance from junction to case of 3.125 °C/W.

Feature Summary

• High current handling capability with a continuous collector current rating of 7 A
• Robust thermal performance supporting 40 W power dissipation in a TO-220 package
• Wide operating temperature range suitable for demanding environments

Applications

• Power switching circuits requiring high current capacity
• Complementary amplifier stages in audio or signal processing systems
• General-purpose power control applications

Procurement Notes

Verify component authenticity as the 2N6111G is listed as obsolete by onsemi. Confirm availability of authorized substitutes such as the 2N6107 if new production is required. Ensure procurement channels provide valid RoHS compliance documentation and material declarations. Check lead times carefully due to potential discontinuation status.

Selection Notes

Select this component for applications needing a PNP power transistor with 7 A current capacity and -30 V voltage rating. Consider the TO-220-3 package for through-hole mounting and adequate heat sinking. Evaluate thermal resistance requirements against system constraints. Note that the device is obsolete; plan for lifecycle management or substitute selection.

Part Context

The 2N6111G belongs to onsemi's complementary silicon plastic power transistor series. It is often paired with NPN counterparts like the 2N6107 for push-pull configurations. The TO-220-3 package provides mechanical stability and thermal conductivity. This part serves as a legacy solution for high-power discrete transistor designs.

Replacement Considerations

The 2N6107 is documented as an available substitute. Verify pinout compatibility and electrical parameter alignment before replacement. Since the 2N6111G is obsolete, ensure the substitute meets all original design requirements.