2N6125 PBFREE

Overview

The 2N6125 PBFREE is a silicon PNP power transistor manufactured by Central Semiconductor Corp. It features a maximum collector current of 4 A and a collector-emitter sustaining voltage of 60 V. The device has a transition frequency of 2.5 MHz and a minimum DC current gain (hFE) of 25. Power dissipation is rated at 40 W with an operating temperature range from -65°C to 150°C TJ. It utilizes a TO-220 through-hole package.

Feature Summary

• PNP polarity configuration for power switching and linear applications
• Through-hole TO-220 mounting style for robust thermal management
• Lead-free plating compliant with environmental standards

Applications

• Medium power linear circuits
• Power amplifier designs
• General purpose switching applications

Procurement Notes

Verify the specific ordering suffix, as lead-free variants require adding 'PBFREE' to the part number. Note that this component is classified as obsolete or scheduled for discontinuation by the manufacturer. Confirm availability with distributors, as stock may be limited or regionally restricted due to end-of-life status.

Selection Notes

Select this component for applications requiring a 60 V PNP power transistor in a TO-220 package. Ensure the design accommodates the 4 A current limit and 40 W power dissipation rating. Consider the 2.5 MHz transition frequency for speed requirements. Verify compatibility with existing thermal solutions given the through-hole form factor.

Part Context

This part belongs to the 2N612x series of plastic power transistors, which includes both NPN and PNP variants. The 2N6125 specifically denotes the PNP version within this family. These devices are designed for medium power applications, offering a standardized solution for engineers needing reliable silicon power transistors in industrial or consumer electronics contexts.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete lifecycle status, direct cross-referencing should be performed using electrical parameter matching rather than official substitution lists.