SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Harris Corporation 2N6129 is a power bipolar transistor designed for high-current switching applications. It features a PNP configuration constructed from silicon material housed in a TO-220AB flange mount package with plastic/epoxy encapsulation. The device supports a maximum collector current of 7A and withstands a collector-emitter voltage of 50V. Key electrical specifications include a minimum DC current gain (hFE) of 2.3, a maximum collector capacitance of 250 pF, and a maximum power dissipation environment of 40W. It operates at temperatures up to 150°C.
Verify the specific manufacturer source as Harris Corporation assets have undergone corporate restructuring. Confirm that the component meets all required environmental standards and pinout configurations for your specific PCB layout. Ensure the TO-220AB package dimensions align with your thermal interface requirements before finalizing procurement decisions.
Select this component when a PNP power transistor with 7A continuous current capacity is required. The low hFE value indicates it is optimized for saturated switching rather than linear amplification. Consider the TO-220AB package for its ease of mounting to heat sinks in high-power dissipation scenarios.
This component belongs to the family of power bipolar transistors manufactured by Harris Corporation. These devices are characterized by their ability to handle significant electrical loads in compact packages. The TO-220AB form factor is standard for through-hole mounting in industrial electronics.
Cross-reference with other PNP power transistors rated for 7A and 50V. Verify that any substitute maintains the same TO-220AB footprint and thermal characteristics to ensure compatibility with existing heatsinking solutions.