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The Microchip Technology 2N6186 is a silicon PNP power bipolar junction transistor designed for high-power applications. It features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 10A. The device is housed in a TO-210AA package, providing robust thermal management capabilities. It serves as the complementary counterpart to the NPN 2N5346 series. The component supports an operating and storage junction temperature range from -55°C to +200°C, ensuring reliability under extreme thermal conditions.
Verify the manufacturer source against official Microchip Technology documentation to ensure authenticity. Confirm that the part number matches the specific 2N6186 designation without conflicting suffixes. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions prior to integration into final designs.
Select this component when a PNP power transistor with 80V breakdown and 10A current capacity is required. Ensure the application environment stays within the specified -55°C to +200°C junction temperature limits. Consider the TO-210AA package size for adequate heat dissipation relative to the 60W power dissipation rating.
The 2N6186 belongs to a family of silicon PNP power transistors manufactured by Microchip Technology. It is specifically engineered to complement the NPN 2N5346 through 2N5349 series, facilitating push-pull configurations. The device utilizes standard bipolar junction transistor technology optimized for high-current switching and amplification tasks in industrial and consumer electronics.
Public confirmed substitute part numbers are not available in the provided documentation.