2N6211

2N6211

$29.84
  • Description:TRANS PNP 225V 2A TO66
  • Series:-

SKU:02677affd4f1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 225V 2A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):225 V
  • Vce Saturation (Max) @ Ib, Ic:1.4V @ 125mA, 1A
  • Current - Collector Cutoff (Max):5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 1A, 5V
  • Power - Max:3 W
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 200°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

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2N6211

Overview

The Microchip Technology 2N6211 is a PNP power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-66-2 package. It operates with a maximum collector-emitter voltage of 225 V and a collector-base voltage of 275 V, supporting a maximum DC collector current of 2 A. The device features a maximum operating temperature of +200°C and an emitter-base voltage rating of 6 V. With a collector-emitter saturation voltage of 1.4 V and a power dissipation capacity of 3 W, it utilizes silicon technology for robust performance in high-voltage switching applications.

Feature Summary

  • High voltage capability with 225 V collector-emitter breakdown
  • Robust thermal performance supporting operation up to +200°C
  • High current handling with 2 A maximum DC collector current
  • Durable metal case construction for reliable power switching

Applications

  • High-voltage switching circuits
  • Power amplifier stages
  • Industrial control systems requiring rugged discrete transistors

Procurement Notes

Verify the specific revision and lot traceability when ordering, as military-grade specifications may apply to this component family. Confirm that the TO-66-2 lead form matches your PCB or chassis mounting requirements. Ensure thermal management solutions account for the 3 W power dissipation limit at elevated ambient temperatures. Check for any specific handling instructions related to the hermetic seal integrity of the metal case during assembly processes.

Selection Notes

Select this component when design requirements demand high voltage tolerance combined with significant current handling in a single-ended configuration. The TO-66 package offers superior heat dissipation compared to plastic equivalents, making it suitable for environments where reliability under thermal stress is critical. Consider the 225 V rating to ensure adequate margin over peak circuit voltages. Evaluate the +200°C maximum junction temperature against your system's worst-case thermal profile to guarantee long-term operational stability.

Part Context

The 2N6211 belongs to the standard NPN/PNP power transistor series manufactured by Microchip Technology. These components are widely recognized for their durability in harsh environments. The TO-66 metal can package provides excellent mechanical strength and thermal conductivity. This specific PNP variant complements other devices in the lineup for complementary push-pull configurations or high-side switching applications in industrial and aerospace electronics.

Replacement Considerations

Consult official cross-reference lists for direct replacements such as equivalent PNP power BJTs in TO-66 packages. Verify that substitute parts match the 225 V VCEO, 2 A IC, and pinout compatibility. Ensure alternative components meet the same thermal and electrical ratings to maintain circuit integrity without redesign.

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