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Product Detailed Parameters
- Description：TRANS PNP 225V 2A TO-66
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：225 V
- Vce Saturation (Max) @ Ib, Ic：1.4V @ 125mA, 1A
- Current - Collector Cutoff (Max)：5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 1A, 2.8V
- Power - Max：35 W
- Frequency - Transition：20MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6211 is a silicon PNP power transistor housed in a TO-66 case. It is designed for high-speed switching and high-voltage amplifier applications. Key electrical ratings include a collector-base voltage of 275 V, a collector-emitter voltage of 225 V, and an emitter-base voltage of 6.0 V. The device supports a continuous collector current of 2.0 A and a peak collector current of 5.0 A. Power dissipation reaches 35 W with a thermal resistance of 5.0 °C/W. Operating junction temperature ranges from -65 to +200 °C.
Feature Summary
- Designed for high-speed switching and high-voltage amplifier applications
- Features a robust TO-66 metal case construction
- Supports wide operating junction temperatures up to +200 °C
Applications
- High-speed switching circuits
- High-voltage amplifier stages
Procurement Notes
Verify the End of Life status before procurement planning. Last purchase orders must be placed within six months of the notice date, with final shipments occurring twelve months after the notice. Minimum order quantities may apply during this transition period. Contact Central Semiconductor directly via their online inquiry portal if assistance is required to locate alternate sources or obtain additional technical data.
Selection Notes
Select the 2N6211 when specific high-voltage requirements are met by its 225 V collector-emitter rating. Ensure the application utilizes a TO-66 compatible mounting solution to leverage the device's thermal performance. Verify that the circuit design accommodates the specified maximum ratings for collector current and power dissipation under the intended thermal conditions.
Part Context
This component belongs to a series of silicon PNP power transistors manufactured by Central Semiconductor Corp. The 2N6211 shares the same package and general design philosophy as the 2N6212 and 2N6213 models. These devices are distinguished primarily by their breakdown voltage ratings, which increase across the series from 225 V to 400 V.
Replacement Considerations
No replacement part numbers are currently available for the 2N6211. The product has been classified as End of Life with no suggested substitutes listed by the manufacturer.
