2N6284

$52.51

Description：TRANS NPN DARL 100V 20A TO204AA
Series：-

SKU:8a1bb8434a95 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 100V 20A TO204AA
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：20 A
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：3V @ 200mA, 20A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：1500 @ 1A, 3V
Power - Max：175 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204AA (TO-3)

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2N6284

Overview

The Microchip Technology 2N6284 is a single NPN power Darlington transistor designed for through-hole mounting in the TO-204AA-2 (TO-3) package. It supports a maximum collector-emitter voltage of 100 V and a continuous collector current of 20 A. The device features a high power dissipation rating of 175 W and operates within a temperature range of -65 °C to +200 °C. Key electrical characteristics include a minimum DC current gain (hFE) of 8, a maximum collector cutoff current of 10 uA, and a maximum operating frequency of 1 MHz.

Feature Summary

High-power NPN Darlington configuration for robust switching applications
Extended thermal capability with operation up to +200 °C
Flange-mount metal package for efficient heat dissipation

Applications

Industrial motor control systems
High-current power switching circuits
Heavy-duty relay drivers

Procurement Notes

Verify the manufacturer designation carefully, as the 2N6284 part number is also assigned to onsemi with slightly different specifications such as VEBO and hFE ranges. Confirm the specific datasheet version from Microchip Technology to ensure compatibility with your design requirements regarding power dissipation and thermal limits. Check for RoHS compliance status as indicated in official documentation.

Selection Notes

Select this component when high current handling and wide temperature operation are required. The TO-3 package necessitates appropriate heatsinking strategies due to its 175 W dissipation rating. Ensure the base drive circuit can supply sufficient current to achieve the specified gain levels under load conditions.

Part Context

This device belongs to the family of high-power bipolar junction transistors manufactured by Microchip Technology. It utilizes silicon technology and is housed in a standard TO-3 metal case, distinguishing it from smaller signal transistors or modern surface-mount alternatives.