2N6285

$52.47

Description：TRANS PNP DARL 60V 20A DIE
Series：-

SKU:70ee09b37445 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS PNP DARL 60V 20A DIE
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：20 A
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：3V @ 200mA, 20A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 10A, 3V
Power - Max：160 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die

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2N6285

Overview

The Microchip Technology 2N6285 is an NPN silicon power Darlington transistor designed for high-voltage and high-current applications. It features a maximum collector-emitter voltage of 100V, a maximum DC collector current of 10A, and a total power dissipation of 160W. The device exhibits a minimum DC current gain (hFE) of 750 at 10A with Vce=3V. Operating junction temperature ranges from -65°C to 200°C. It utilizes a TO-3 package and serves as the complementary counterpart to the PNP 2N6282 series.

Feature Summary

High DC current gain suitable for amplification
Low collector-emitter saturation voltage
Fast switching speed capabilities
Robust thermal performance with extended temperature range

Applications

General-purpose amplifier circuits
Low-frequency switching applications
Linear power regulation stages
Switching inductive loads

Procurement Notes

Verify the manufacturer marking on the TO-3 package header to confirm Microchip Technology origin. Cross-reference the datasheet revision date against the component batch code. Ensure the pinout configuration matches the standard Base-Emitter-Collector arrangement specified in the official Microchip documentation before integration into PCB layouts.

Selection Notes

Select this component when high current drive capability and elevated voltage tolerance are required in a single package. The high hFE reduces base drive requirements compared to standard bipolar transistors. Consider the TO-3 mechanical footprint and thermal resistance characteristics for heat sink design. Evaluate the complementary 2N6282 if push-pull configurations are necessary for the specific circuit topology.

Part Context

This part belongs to the family of complementary silicon power Darlington transistors. It pairs with the 2N6282, 2N6283, and 2N6284 PNP devices. These components are engineered for robust performance in industrial and commercial power electronics where reliability under high stress conditions is critical.

Replacement Considerations

Official complementary substitutes include the 2N6282, 2N6283, and 2N6284 PNP variants within the same product line. Verify pin compatibility and thermal specifications when substituting with generic equivalents from other manufacturers.