2N6287

2N6287

$53.01
  • Description:TRANS PNP DARL 100V 20A TO204AA
  • Series:-

SKU:65048cf4df58 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP DARL 100V 20A TO204AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):20 A
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 200mA, 20A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1500 @ 1A, 3V
  • Power - Max:175 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204AA (TO-3)

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2N6287

Overview

The Microchip Technology 2N6287 is a PNP power Bipolar Junction Transistor (BJT) configured as a Darlington pair. It is designed for through-hole mounting and operates with a collector-emitter voltage rating of 100V and a continuous collector current capacity of 20A. The device supports a total power dissipation of 160W, making it suitable for high-current switching applications requiring robust gain characteristics.

Feature Summary

  • High current handling capability via Darlington configuration
  • Robust power dissipation performance for thermal stability
  • Through-hole package design for secure mechanical mounting

Applications

  • High-power switching circuits
  • Industrial motor control interfaces
  • Power supply output stages

Procurement Notes

Verify the specific ordering suffix against the official Microchip datasheet to ensure correct packaging and variant selection. Confirm RoHS compliance status directly from the manufacturer's documentation, as indicated by available distributor metadata. Cross-reference the component number with the latest Product Change Notification (PCN) dated January 23, 2024, to account for any manufacturing site or material updates that may affect specifications.

Selection Notes

Select this component when designing circuits requiring high DC current gain and substantial power handling in a PNP topology. Ensure the thermal management solution accommodates the 160W dissipation rating under worst-case operating conditions. Verify that the 100V breakdown voltage exceeds the maximum circuit voltage spikes to prevent device failure during transient events.

Part Context

This component belongs to the discrete transistor category within Microchip's portfolio, specifically utilizing the standard military-style 2N numbering convention. It serves as a high-power switching element distinct from logic-level transistors, intended for applications demanding significant load current control rather than signal amplification.

Replacement Considerations

Consult the official datasheet for electrically equivalent alternatives. No public substitute part numbers are confirmed in the provided reference data.

2N62872N6287
$53.01
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