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The Microchip Technology 2N6287 is a PNP power Bipolar Junction Transistor (BJT) configured as a Darlington pair. It is designed for through-hole mounting and operates with a collector-emitter voltage rating of 100V and a continuous collector current capacity of 20A. The device supports a total power dissipation of 160W, making it suitable for high-current switching applications requiring robust gain characteristics.
Verify the specific ordering suffix against the official Microchip datasheet to ensure correct packaging and variant selection. Confirm RoHS compliance status directly from the manufacturer's documentation, as indicated by available distributor metadata. Cross-reference the component number with the latest Product Change Notification (PCN) dated January 23, 2024, to account for any manufacturing site or material updates that may affect specifications.
Select this component when designing circuits requiring high DC current gain and substantial power handling in a PNP topology. Ensure the thermal management solution accommodates the 160W dissipation rating under worst-case operating conditions. Verify that the 100V breakdown voltage exceeds the maximum circuit voltage spikes to prevent device failure during transient events.
This component belongs to the discrete transistor category within Microchip's portfolio, specifically utilizing the standard military-style 2N numbering convention. It serves as a high-power switching element distinct from logic-level transistors, intended for applications demanding significant load current control rather than signal amplification.
Consult the official datasheet for electrically equivalent alternatives. No public substitute part numbers are confirmed in the provided reference data.