2N6295 PBFREE

Overview

The 2N6295 PBFREE is an NPN Darlington silicon power transistor manufactured by Central Semiconductor Corp. It features a collector current of 4A, collector-base voltage of 80V, and collector-emitter voltage of 80V. The device has an emitter-base voltage of 5.0V and operates at a frequency of 4MHz. Maximum power dissipation is 50W with a junction temperature range of -65°C to 200°C. DC current gain is 300 minimum at 1.5A and 3V. Collector cutoff current is 500µA maximum.

Feature Summary

• Darlington configuration for high current gain
• Through-hole TO-213AA/TO-66-2 package
• Lead-free plating option available

Applications

• Power switching applications
• Linear amplifier circuits
• High-gain output stages

Procurement Notes

Verify the 'PBFREE' suffix indicates lead-free compliant plating per manufacturer specifications. Confirm package type matches TO-213AA or TO-66-2 requirements. Ensure ordering documentation explicitly states the full part number including suffix to guarantee correct material composition and compliance status.

Selection Notes

Select this component for applications requiring high DC current gain in a single NPN configuration. Consider the 50W power dissipation capability and wide operating temperature range for robust thermal performance. Verify that the 4A collector current meets circuit load requirements without exceeding safe operating area limits.

Part Context

This part belongs to the complementary silicon power transistor series including 2N6294, 2N6296, and 2N6297. The 2N6295 specifically serves as the NPN counterpart in this Darlington pair arrangement. It is designed for general-purpose power switching and amplification tasks within the bipolar power transistor category.

Replacement Considerations

Direct substitutes include 2N6295 from New Jersey Semi-Conductor Products Inc. Verify pinout compatibility and electrical parameter equivalence before substitution. Check if alternative manufacturers offer identical TO-213AA packaging for mechanical fit.