2N6296

Overview

The 2N6296 is a silicon PNP power transistor manufactured by Inchange Semiconductor, not Microchip Technology. It is housed in a TO-66 package and configured as a Darlington pair. The device serves as the complement to the 2N6294 and 2N6295 types. Its primary electrical characteristics include specific collector-base voltage ratings under open emitter conditions and defined collector current limits at an ambient temperature of 25°C.

Feature Summary

• Darlington configuration for high gain performance
• TO-66 metal can package construction
• Complementary pairing with 2N6294/6295 models

Applications

• High gain amplifier circuits
• Medium speed switching applications

Procurement Notes

Verify the manufacturer origin carefully, as the 2N6296 is produced by Inchange Semiconductor rather than Microchip Technology. Confirm that the TO-66 package style meets your mechanical requirements. Ensure the Darlington configuration aligns with your circuit design needs before procurement.

Selection Notes

Select this component when a high-gain PNP solution is required in a robust metal can package. Consider its complementary relationship with the 2N6294/6295 series for matched pairs. Evaluate the medium-speed switching capabilities against your specific timing requirements.

Part Context

This part belongs to the family of silicon PNP power transistors designed for robust industrial applications. The TO-66 package provides superior thermal dissipation compared to plastic alternatives. As a Darlington device, it offers significantly higher current gain than single-transistor equivalents.

Replacement Considerations

The 2N6294 and 2N6295 are documented complements to this device. Verify pinout compatibility and voltage ratings when substituting with other PNP Darlington transistors from different manufacturers.