2N6379

Overview

The 2N6379 is a silicon NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-voltage switching and amplification applications, featuring a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 1A. The device utilizes a TO-220AB through-hole package to facilitate effective thermal management during operation. Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 100 and a maximum power dissipation capability of 80W at 25°C case temperature. It operates within a junction temperature range of -65°C to +200°C, ensuring reliability in demanding environments.

Feature Summary

• High voltage blocking capability suitable for robust switching circuits
• Through-hole mounting for secure mechanical attachment and heat sinking
• Wide operating temperature range for extreme environment stability

Applications

• High-voltage linear and switching power supplies
• Industrial motor control drivers
• Inverter circuits for AC/DC conversion

Procurement Notes

Verify the specific suffix codes on the component marking against the official Microchip datasheet to confirm pinout orientation and thermal pad configuration. Ensure that the procurement channel provides traceability documentation required for aerospace or military-grade specifications if applicable. Cross-reference the lot date code with current production status to avoid obsolete stock issues.

Selection Notes

Select this component when circuit requirements demand a 400V collector-emitter voltage rating combined with 1A continuous current handling. Evaluate the thermal resistance parameters relative to the intended heatsink design to ensure the junction temperature remains within safe limits under maximum load conditions. Consider the hFE spread when designing base drive circuits to guarantee saturation in switching modes.

Part Context

This part belongs to the standard discrete semiconductor portfolio offered by Microchip Technology, focusing on reliable silicon-based bipolar transistors. It serves as a legacy replacement for older military-specification devices while maintaining compatibility with modern industrial form factors. The product line emphasizes long-term availability and consistent performance for critical infrastructure applications.

Replacement Considerations

Consult official Microchip substitution guides for direct equivalents such as the 2N6378 series variants. Verify that any alternative device matches the 400V VCEO rating and TO-220 package dimensions to maintain board compatibility without redesign.