2N6382

2N6382

$695.27
  • Description:TRANS PNP 120V 50A TO-63
  • Series:-

SKU:a5e20101c5de Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 120V 50A TO-63
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):50 A
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:250 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Stud Mount
  • Package / Case:TO-211MB, TO-63-4, Stud
  • Supplier Device Package:TO-63
  • Grade:-
  • Qualification:-

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2N6382

Overview

The 2N6382 is a PNP silicon power bipolar junction transistor (BJT) manufactured by Microsemi Corporation. It is designed for high-power applications, featuring a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 50 A. The device utilizes a TO-63 package style, suitable for robust industrial environments. As a discrete semiconductor component, it serves as a fundamental switching and amplification element within electronic circuits requiring significant current handling capabilities.

Feature Summary

  • Constructed from silicon material for reliable thermal performance
  • Designed as a PNP polarity power transistor for high-current control
  • Utilizes the TO-63 package configuration for mechanical stability

Applications

  • High-power switching circuits
  • Industrial power management systems
  • Amplifier stages requiring substantial current drive

Procurement Notes

Verify the manufacturer designation carefully, as the 2N6382 part number appears in databases associated with multiple vendors including Microchip Technology and Motorola. Confirm that the specific unit received matches the Microsemi Corporation specification sheet regarding the 120 V and 50 A ratings. Ensure the package type corresponds to the TO-63 form factor to guarantee compatibility with existing board layouts and thermal management solutions.

Selection Notes

Select this component when a PNP silicon BJT with high current capacity is required. The 50 A rating distinguishes it from lower-power general-purpose transistors. Consider the 120 V breakdown voltage relative to the circuit's operating levels. The TO-63 package dictates specific mounting and heat dissipation requirements that must be addressed during the design phase to ensure long-term reliability under load.

Part Context

The 2N6382 belongs to the class of discrete power bipolar junction transistors. It is categorized under silicon-based semiconductor devices intended for heavy-duty electrical control. Unlike integrated circuits, this component functions as a single active element. Its designation follows standard military-style numbering conventions often adopted for ruggedized electronic parts.

Replacement Considerations

Cross-reference data indicates potential equivalents or similar listings under manufacturers such as Motorola Semiconductor. Verify pinout compatibility and thermal resistance characteristics before substituting with units from other suppliers to maintain circuit integrity.

2N63822N6382
$695.27
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