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2N6403TG is listed in the Scrs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is SCR 400V 16A TO220AB. Review the specifications below when checking this part for your BOM.
The Littelfuse 2N6403TG is a silicon gate-controlled thyristor (SCR) in a TO-220AB package. It features glass-passivated junctions and thermowatt construction for durability. The device supports a peak repetitive off-state voltage of 400 V. It handles an on-state RMS current of 16 A and an average on-state current of 10 A at a case temperature of 100°C. Peak non-repetitive surge current reaches 160 A. Operating junction temperature ranges from -40°C to +125°C. Thermal resistance from junction to case is 1.5°C/W.
Verify the specific ordering suffix 'TG' against official Littelfuse documentation to confirm tube shipping quantities, as standard variants may use box packaging. Ensure the component meets Pb-Free requirements if applicable to your assembly process. Cross-reference the datasheet revision date with your procurement records to validate technical specifications.
Select this component when a 400 V blocking voltage is required for half-wave AC circuits. Verify that the 10 A average current rating aligns with the thermal management design, considering the 1.5°C/W junction-to-case thermal resistance. Confirm that the gate trigger characteristics fit the driving circuit constraints.
This part belongs to the 2N640xG series of surface mount and through-hole thyristors. The series covers blocking voltages from 50 V to 800 V. All devices in this family share similar electrical ratings for current handling and thermal performance, differentiated primarily by their voltage blocking capabilities.
Other parts within the 2N640xG series offer different voltage ratings but identical current and thermal characteristics. Direct substitutes must match the 400 V blocking requirement and TO-220AB package dimensions.
The maximum operating junction temperature is +125°C.
The holding current increases with temperature, reaching a maximum of 60 mA at -40°C compared to a typical 18 mA at 25°C.
The critical rate-of-rise of off-state voltage (dv/dt(c)) is typically 50 V/µs at a junction temperature of +125°C.
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