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Product Detailed Parameters
- Description：TRANS TO92-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6426 PBFREE is an NPN Darlington transistor housed in a TO-92 (TO-226) through-hole package. It features a collector-emitter breakdown voltage of 40 V and a maximum DC collector current of 500 mA. The device provides a minimum DC current gain of 20,000 at 100 mA and 5 V, with a maximum collector cutoff current of 50 nA. Power dissipation is rated at 625 mW, and the transition frequency is 150 MHz.
Feature Summary
- Darlington configuration delivers high current amplification suitable for low-level signal processing
- Through-hole TO-92 construction supports standard printed circuit board mounting techniques
- Low collector cutoff current minimizes leakage effects in sensitive switching applications
Applications
- High-gain amplifier circuits requiring substantial current control
- Switching loads where minimal base drive current is available
- Interface stages connecting logic outputs to higher current peripherals
Procurement Notes
Verify component authenticity by matching the manufacturer marking against official datasheet specifications. Confirm RoHS compliance status directly with the supplier or distributor prior to purchase. Ensure the ordering suffix matches the required plating finish. Request updated availability status as this component may be subject to discontinuation notices.
Selection Notes
Evaluate the 40 V collector-emitter breakdown voltage against the maximum circuit operating voltage to ensure adequate safety margins. Consider the 625 mW power dissipation limit when designing thermal management solutions for enclosed environments. Verify that the 500 mA collector current rating exceeds the peak load requirements of the intended application.
Part Context
This component belongs to the small-signal bipolar junction transistor category manufactured by Central Semiconductor Corp. It utilizes the standardized 2N6426 designation within the industry. The device is designed for general-purpose amplification and switching tasks in consumer electronics and industrial control systems.
Replacement Considerations
Consult the manufacturer's End of Life notification documents for officially suggested replacement part numbers. Verify electrical compatibility before substituting components from other manufacturers.
