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The onsemi 2N6426RLRAG is an NPN Darlington bipolar junction transistor designed for through-hole mounting in a TO-92 (TO-226) package. It features a maximum collector-emitter breakdown voltage of 40 V and a continuous collector current rating of 500 mA. The device offers a minimum DC current gain of 30,000 at 100 mA with 5 V applied across the collector and emitter. It supports a power dissipation of 625 mW and operates within a junction temperature range of -55°C to 150°C.
Verify component authenticity by cross-referencing the manufacturer part number with official datasheets. Confirm that the specific suffix matches the requested reel configuration. Check RoHS compliance status as historical data indicates potential non-compliance for older manufacturing runs. Ensure the supplier provides traceable documentation matching the exact lot codes to prevent counterfeit infiltration during procurement.
Select this component when high current gain is critical for driving loads from low-current sources. The TO-92 package limits thermal dissipation compared to larger packages, so ensure adequate heat sinking or duty cycle management. Verify that the 40 V breakdown voltage meets the circuit's peak transient requirements. Consider the saturation voltage characteristics when designing for low-power loss applications.
This device belongs to the standard NPN Darlington transistor family produced by onsemi. It shares architectural similarities with the 2N6427 series but differs in specific electrical parameters and packaging options. The component serves as a discrete semiconductor solution for analog and digital switching applications where traditional single-transistor designs lack sufficient gain.
Public confirmed substitute part numbers include 2N6427 and 2N6426OS.