2N6432 PBFREE

Overview

The Central Semiconductor Corp 2N6432 PBFREE is a PNP complementary small-signal silicon transistor manufactured via the epitaxial planar process. It features a collector-base voltage of 200 V and a collector-emitter voltage of 200 V. The device supports a continuous collector current of 500 mA with a power dissipation rating of 1.8 W at 25°C case temperature, or 500 mW in free air. Operating junction temperatures range from -65 to +200 °C. Electrical characteristics include a minimum DC current gain (hFE) of 25 at 1.0 mA collector current and up to 200 at 30 mA. Transition frequency (fT) reaches 50 MHz at 100 MHz test conditions.

Feature Summary

• Designed for high voltage amplifier applications using an epitaxial planar silicon process
• Provides complementary pairing capability within the 2N6430 series alongside NPN variants
• Supports extended operating junction temperatures up to +200 °C

Applications

• High voltage amplifier circuits
• Complementary switching applications requiring paired NPN/PNP configurations
• General purpose discrete transistor stages

Procurement Notes

Verify that the ordering suffix matches the required plating specification. The PBFREE designation indicates lead-free plating. If tin/lead plating is required, the suffix must be changed to TIN/LEAD. Confirm the TO-18 package type and pinout configuration (Emitter, Base, Collector) aligns with the target PCB footprint before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a PNP counterpart to the 2N6430 NPN transistor. Ensure the design accounts for the 200 V breakdown limits and the specific thermal resistance values for both junction-to-case and junction-to-air environments. Verify that the required hFE gain falls within the specified ranges for the intended collector current levels.

Part Context

This part belongs to the Central Semiconductor 2N6430 series, which includes complementary pairs: 2N6430/2N6431 (NPN) and 2N6432/2N6433 (PNP). These devices are designed as matched sets for balanced circuit performance. The series utilizes standard TO-18 metal can packaging, suitable for through-hole mounting in legacy or high-reliability designs requiring robust mechanical stability.

Replacement Considerations

Direct functional substitutes within the same complementary family include the 2N6433. Cross-family replacements require matching the 200 V voltage ratings, 500 mA current capacity, and TO-18 package dimensions. Verify pinout compatibility and thermal characteristics before substituting with generic PNP transistors.

FAQ

What is the maximum collector-base voltage for the 2N6432?

The maximum collector-base voltage (V_CBO) is 200 V.

Does the PBFREE suffix affect the electrical parameters?

No, the PBFREE suffix only indicates lead-free plating. The electrical characteristics remain identical to the standard version.

What is the transition frequency (fT) specification?

The transition frequency is specified at 50 MHz under test conditions of V_CE=20V, I_C=10mA, and f=100MHz.