2N6433 TIN/LEAD

Overview

The Central Semiconductor Corp 2N6433 TIN/LEAD is a PNP high voltage small signal transistor housed in a TO-18 package. It features a rated repetitive off-state voltage of 300 V and supports a continuous collector current of 500 mA. The device dissipates up to 500 mW of power and operates within a temperature range of -65°C to +150°C. Key electrical characteristics include a minimum DC current gain of 200 at specified conditions, a collector-base breakdown voltage of 300 V, and a transition frequency of 30 MHz.

Feature Summary

• High voltage capability suitable for demanding circuit applications
• Robust through-hole construction for reliable mounting
• High current gain for effective signal amplification

Applications

• High voltage switching circuits
• General purpose amplification
• Industrial control systems

Procurement Notes

Verify the specific ordering suffix to confirm lead plating composition, as variations exist between tin/lead and lead-free options. Confirm that the TO-18 package style matches the target PCB footprint or chassis mount requirements. Ensure the thermal management strategy accommodates the 500 mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a PNP transistor with 300 V blocking capability and moderate current handling is required. Compare against alternatives if higher transition frequencies or different package styles are necessary. Validate that the 500 mA continuous current rating exceeds the maximum load current in the design.

Part Context

This part belongs to the Central Semiconductor small signal transistor family, specifically designed for general-purpose applications requiring high voltage ratings. The TO-18 metal can package provides hermetic sealing options and robust mechanical stability compared to plastic packages.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.