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Product Detailed Parameters
- Description：TRANS PNP 80V 15A TO-220-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：15 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：3.5V @ 5A, 15A
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
- Power - Max：75 W
- Frequency - Transition：5MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6491 PBFREE is a PNP silicon power transistor designed for general-purpose switching and amplifier applications. It operates within a collector-emitter voltage range of up to 80 V and supports a continuous collector current of 15 A. The device dissipates 75 W at a case temperature of 25°C, with a thermal resistance from junction to case of 1.67 °C/W. It features a minimum DC current gain (hFE) of 20 at 5.0 A and 5.0 at 15 A. The transition frequency (fT) is rated at 5.0 MHz under standard test conditions.
Feature Summary
- Complementary PNP silicon power transistor engineered for robust switching and linear amplifier operations.
- High current handling capability supporting up to 15 A continuous collector current.
- Low thermal resistance design facilitating efficient heat dissipation in high-power environments.
Applications
- General purpose power switching circuits
- Linear amplifier stages
- Power supply output stages
Procurement Notes
Verify the specific plating configuration required for your assembly process. The datasheet indicates that ordering without a suffix may result in either lead-free or tin/lead plated devices depending on availability. Explicitly request the 'PBFREE' or 'TIN/LEAD' suffix if a specific termination type is mandatory for compliance or soldering compatibility.
Selection Notes
Select this component when a PNP power transistor with 80 V breakdown and 15 A current capacity is needed. Ensure the application provides adequate heatsinking to manage the 75 W power dissipation rating. Verify that the base drive current can support the required collector current given the hFE specifications at both low and high load conditions.
Part Context
This device belongs to the 2N6486-2N6491 series of complementary silicon power transistors manufactured by Central Semiconductor Corp. The series includes NPN types (2N6486-2N6488) and PNP types (2N6489-2N6491), all housed in TO-220 packages. These components are intended for use in demanding power electronics applications requiring reliable performance across a wide temperature range.
Replacement Considerations
Official documentation lists the 2N6491 as End of Life (EOL) with no suggested replacement part numbers provided by the manufacturer. Customers are advised to contact Central Semiconductor directly for assistance in locating alternate sources or suitable substitutes.
