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Product Detailed Parameters
- Description：TRANS PNP 80V 15A TO-220
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：15 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：3.5V @ 5A, 15A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 5A, 4V
- Power - Max：1.8 W
- Frequency - Transition：5MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6491G is a PNP silicon power transistor designed for general-purpose amplifier and switching applications. It features a maximum collector current of -15 A and a collector-emitter sustaining voltage (VCEO) of -80 V. The device offers a high DC current gain specified up to 15 Amperes, with hFE ranging from 20 to 150 at IC = 5.0 Adc. It has a minimum bandwidth product (fT) of 5.0 MHz at IC = 1.0 Adc. The component is housed in a TO-220AB compact package, supports through-hole mounting, and operates within a temperature range of -65°C to 150°C.
Feature Summary
- High DC current gain specified up to 15 Amperes
- Designed for general-purpose amplifier and switching applications
- Compact TO-220AB package suitable for through-hole installation
Applications
- General-purpose amplifier circuits
- Power switching applications
- Complementary silicon power transistor designs
Procurement Notes
Verify the specific datasheet revision, as ON Semiconductor has released multiple versions (e.g., Rev. 14, Rev. 16). Confirm that the procurement matches the exact part number suffix 'G' which typically indicates lead-free packaging. Ensure the supplier provides official documentation to validate the electrical parameters against the latest public specifications.
Selection Notes
Select this component when a PNP power transistor with -80 V VCEO and -15 A continuous collector current is required. It serves as the complementary counterpart to NPN devices like the 2N6487/2N6490 series. Consider the TO-220AB package for thermal management needs in general-purpose applications. Verify that the required hFE range and fT meet the specific circuit design constraints.
Part Context
The 2N6491G belongs to the family of 15 Ampere complementary silicon power transistors produced by onsemi. It is often paired with NPN equivalents such as the 2N6487 or 2N6490 in push-pull configurations. The device is engineered for robust performance in standard industrial and consumer electronics applications requiring high current handling capabilities.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official onsemi documentation for potential cross-references or complementary pairs within the same product family.
