2N6516 TIN/LEAD

$0.31

Description：300V 500MA 625MW TH TRANSISTOR-S
Series：-

SKU:85349bfa52d1 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6516 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 300V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6516 TIN/LEAD

Description：300V 500MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：45 @ 30mA, 10V
Power - Max：625 mW
Frequency - Transition：40MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6516 TIN/LEAD

2N6516 TIN/LEAD

Single Bipolar Transistors Overview

The 2N6516 TIN/LEAD is an NPN silicon epitaxial planar transistor manufactured by Central Semiconductor Corp. It features a collector-base voltage of 300V and a collector-emitter voltage of 300V, with an emitter-base voltage of 6.0V. The device supports a continuous collector current of 500mA and operates at a transition frequency of 40MHz. Power dissipation is rated at 625mW. It utilizes a TO-92-3 through-hole package with tin/lead plating.

Single Bipolar Transistors Feature Summary

High voltage capability suitable for driver applications
Complementary design within the 2N6515 series family
Through-hole TO-92-3 plastic case construction

Single Bipolar Transistors Applications

High voltage amplifier circuits
Driver stages in electronic systems
General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix requirement when requesting tin/lead plated devices. The manufacturer mandates adding the “TIN/LEAD” suffix to the base part number during the ordering process to ensure compliance with environmental regulations and material specifications. Confirm this designation matches the required component variant before finalizing procurement documentation.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage NPN amplification in a standard through-hole package. Ensure the circuit parameters remain within the 300V breakdown limits and 625mW power dissipation rating. Consider the complementary PNP counterpart if push-pull configurations are necessary for the application architecture.

Single Bipolar Transistors Part Context

This device belongs to the Central Semiconductor 2N6515 series, which includes complementary NPN and PNP silicon transistors. The series is engineered specifically for high voltage driver and amplifier applications. The 2N6516 serves as the NPN element within this matched pair structure.