2N6517

Single Bipolar Transistors Overview

The onsemi 2N6517 is a high-voltage NPN silicon epitaxial planar transistor designed for through-hole mounting in TO-92 packages. It provides a collector-emitter voltage of 350 Vdc and continuous collector current up to 500 mAdc. The device features a maximum power dissipation of 625 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 200 °C/W. Operating characteristics include a DC current gain ranging from 20 to 200 and a transition frequency of 200 MHz. The component supports an operating junction temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 350 V collector-emitter breakdown rating
• Suitable for switching applications with defined turn-on and turn-off times
• Robust thermal performance allowing operation up to 150°C junction temperature

Single Bipolar Transistors Applications

• High voltage switching circuits
• General purpose amplifier stages
• Driver circuits requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., RLRP) against the datasheet to confirm packaging type, as bulk and tape-and-reel options exist. Confirm RoHS compliance status for the specific batch if required by assembly specifications. Check the manufacturer's latest announcements regarding product lifecycle status, as availability may vary across different distribution channels.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor requires a minimum 350 V collector-emitter voltage rating. Ensure the application current does not exceed 500 mAdc continuously. Verify that the TO-92 package dimensions fit the PCB layout constraints. Consider the thermal resistance requirements if the device will operate near the upper temperature limits without adequate heatsinking.

Single Bipolar Transistors Part Context

This part belongs to the 2N65xx series of high-voltage transistors manufactured by onsemi. The series includes variants such as the 2N6515 and 2N6520, which share similar physical packages but differ in voltage ratings and polarity configurations. The 2N6517 specifically addresses designs needing higher voltage tolerance than the 2N6515 while maintaining standard low-power transistor form factors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2N6515 (250 V rating) and 2N6520 (PNP polarity). Cross-manufacturer equivalents must be verified for matching pinout, voltage ratings, and package dimensions before implementation.