Single Bipolar Transistors 2N6517G product image

2N6517G

  • Description:TRANS NPN 350V 0.5A TO92
  • Series:-

SKU:25474a2b6631 Category: Brand:

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2N6517G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 350V 0.5A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6517G

  • Description:TRANS NPN 350V 0.5A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 50mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6517G

2N6517G

Single Bipolar Transistors Overview

The onsemi 2N6517G is a single NPN silicon epitaxial planar transistor housed in a Pb-free TO-92 (Case 29) package. It features a collector-emitter voltage of 350 Vdc and a continuous collector current of 500 mAdc. The device supports a total power dissipation of 625 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 200 °C/W. Electrical characteristics include a DC current gain ranging from 15 to 200, a transition frequency of 200 MHz, and an operating temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a 350 V collector-emitter breakdown rating
  • Suitable for medium power applications with 500 mA continuous collector current
  • Lead-free construction compliant with environmental standards

Single Bipolar Transistors Applications

  • General-purpose high-voltage switching circuits
  • Medium power amplifier stages
  • Driver circuits requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'G' against the manufacturer's official documentation to confirm the bulk packaging configuration. Confirm that the component meets the required lead-free specifications and check for any recent product change notices or lifecycle status updates directly from onsemi before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with a minimum 350 V collector-emitter voltage is required. Ensure the application operates within the 500 mA continuous current limit and respects the 625 mW power dissipation constraints at the expected ambient temperature. Verify that the TO-92 package dimensions fit the designated PCB footprint.

Single Bipolar Transistors Part Context

This part belongs to the 2N6515/2N6517/2N6520 family of high-voltage transistors manufactured by onsemi. The 2N6517 variant specifically provides the NPN configuration with a 350 V rating, distinguishing it from the 2N6515 which has a lower 250 V rating. The G suffix indicates a specific bulk packaging option within the TO-92 form factor.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2N6515 for lower voltage requirements and the 2N6520 for PNP polarity needs. Other manufacturers producing standard 2N6517 equivalents may be considered if electrical parameters match exactly.

2N6517G2N6517G

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