2N6518TA

Single Bipolar Transistors Overview

The 2N6518TA is a PNP epitaxial silicon transistor manufactured by onsemi (formerly Fairchild Semiconductor). It features a collector-emitter voltage of -250 V and a maximum collector current of -500 mA. The device provides a collector power dissipation of 625 mW at 25°C, with a junction temperature rating of 150 °C. Electrical characteristics include a DC current gain ranging from 25 to 300 depending on collector current, and a current gain bandwidth product between 40 MHz and 200 MHz. It utilizes a TO-92 package.

Single Bipolar Transistors Feature Summary

• High voltage capability with a collector-emitter breakdown voltage of -250 V
• Suitable for high-speed switching applications with turn-off times as low as 3.5 ns
• Designed as the complementary counterpart to the 2N6515 NPN transistor

Single Bipolar Transistors Applications

• High voltage switching circuits
• Complementary amplifier stages paired with 2N6515
• General purpose discrete transistor applications requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix 'TA' corresponds to the standard TO-92 bulk packaging configuration. Ensure the datasheet revision matches the required specifications for your design, noting that legacy documentation may reference Fairchild branding.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a minimum -250 V collector-emitter voltage rating is required. It serves as the direct complement to the 2N6515 NPN transistor in push-pull or differential configurations. Consider the 625 mW power dissipation limit and the need for thermal derating above 25°C when designing the heat management strategy for the application.

Single Bipolar Transistors Part Context

This component belongs to the 2N651x series of high-voltage bipolar junction transistors. It is specifically engineered to pair with the 2N6515 NPN device, allowing for matched performance in complementary circuit topologies. The series is characterized by high breakdown voltages suitable for demanding analog and switching environments.

Single Bipolar Transistors Replacement Considerations

The 2N6515 is the documented complementary NPN counterpart. Verify pinout compatibility and electrical parameters against other high-voltage PNP transistors if sourcing from different manufacturers.