2N6518TA

Overview

The 2N6518TA is a PNP epitaxial silicon transistor manufactured by Fairchild Semiconductor. It features a collector-emitter voltage rating of -250 V and a maximum collector current of 0.5 A. The device has a minimum DC current gain (hFE) of 25 and supports a maximum junction temperature of 150 °C. It is housed in a TO-92 cylindrical plastic package with three leads.

Feature Summary

• High voltage capability for demanding circuit applications
• PNP polarity configuration for complementary switching designs

Applications

• Complementary circuits paired with the 2N6515 NPN transistor
• General-purpose high-voltage amplification stages
• Switching applications requiring moderate current handling

Procurement Notes

Verify the manufacturer datasheet to confirm absolute maximum ratings, specifically the -250 V collector-emitter voltage and 0.5 A collector current limits. Ensure the TO-92 package orientation matches the design schematic. Confirm RoHS compliance status if required by specific manufacturing standards.

Selection Notes

Select this component when a PNP transistor with high voltage blocking capability is required in a low-power through-hole package. Consider the minimum hFE of 25 for base drive calculations. Verify thermal management requirements against the 625 mW power dissipation limit at ambient temperatures above 25 °C.

Part Context

This part belongs to the discrete semiconductor transistor category. It serves as the PNP complement to the 2N6515 NPN transistor within Fairchild's high-voltage lineup. The TO-92 package provides a standard form factor for general-purpose electronic assemblies.

Replacement Considerations

The 2N6515 is documented as the complementary NPN counterpart. No other direct substitute part numbers are confirmed in the provided documentation.