2N6520 PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6520 PBFREE is a PNP silicon high voltage transistor in the TO-92 case. It features a collector-emitter voltage of 350 V and continuous collector current of 500 mA with 625 mW power dissipation. The device operates within a junction temperature range of -65 to +150 °C. Electrical characteristics include a transition frequency up to 200 MHz, collector-base leakage of 50 nA at 250 V, and saturation voltages ranging from 0.30 V to 1.0 V depending on current levels.

Single Bipolar Transistors Feature Summary

• Designed for high voltage driver and amplifier applications
• Complementary silicon construction paired with NPN variants
• Capable of operation across extended industrial temperature ranges

Single Bipolar Transistors Applications

• High voltage driver circuits
• Amplifier stages requiring high breakdown voltage
• Switching applications utilizing complementary pairs

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required plating finish. The PBFREE designation indicates lead-free plating compliance. Confirm the specific package type and marking requirements align with the design specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require a PNP transistor with a minimum 350 V collector-emitter breakdown voltage. Ensure the thermal management strategy supports the 625 mW power dissipation limit. Verify compatibility with complementary NPN devices from the same series for matched performance in push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor 2N6515 through 2N6520 series of complementary silicon high voltage transistors. The series includes both NPN (2N6515-2N6517) and PNP (2N6518-2N6520) options sharing similar mechanical outlines and electrical profiles for balanced circuit design.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors rated for 350 V C-E voltage and 500 mA collector current in TO-92 packages. Verify pinout compatibility and ensure replacement parts meet the same thermal and leakage specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2N6520?

The maximum collector-emitter voltage (VCEO) is 350 V.

Does the 2N6520 have a complementary NPN counterpart?

Yes, it is part of a complementary series including NPN devices such as the 2N6515, 2N6516, and 2N6517.

What is the transition frequency specification?

The transition frequency (fT) is specified up to 200 MHz under test conditions of VCE=20V, IC=10mA, and f=20MHz.